Introduction to silicon carbide materials

Silicon carbide (SiC), as an inorganic substance, is composed of carbon and silicon in a 1:1 ratio and has a unique Si-C tetrahedral structure. This structure gives silicon carbide excellent physical and chemical properties, such as high hardness, high thermal stability, and wide bandgap. The bandgap width of silicon carbide is as high as 3.26 eV, almost three times that of silicon, which allows it to remain stable at higher temperatures and have a higher breakdown electric field strength.

Preparation of silicon carbide materials

The preparation of silicon carbide materials mainly includes gas phase method, liquid phase method and solid phase method. Among them, physical vapor transport method (PVT) and chemical vapor deposition method (CVD) are the main methods for preparing high-quality SiC single crystals. The PVT method sublimates SiC source powder at high temperature and condenses and grows high-quality SiC single crystals on the surface of the seed crystal. The CVD method obtains ultra-fine and high-purity SiC powder through high-temperature gas reaction. In addition, sol-gel method and top seed solution growth method (TSSG) are also commonly used preparation methods.

Application of silicon carbide materials

SiC materials have been widely used in many fields due to their excellent performance.

‌Power devices‌: Silicon carbide materials have significant advantages in the field of power electronics. For example, in electric vehicle inverters and charging piles, silicon carbide power devices can reduce package size, reduce losses, and improve conversion efficiency. Well-known car companies such as Tesla and BYD have already used silicon carbide devices in their electric vehicle products. In addition, silicon carbide devices are also widely used in photovoltaic inverters and rail transportation, which can improve the overall efficiency of the system.

‌RF devices‌: In the military and communications fields, silicon carbide-based gallium nitride RF devices have become core components of systems such as 5G mobile communication systems and new generation active phased array radars. Its good thermal conductivity, high frequency and high power advantages make silicon carbide materials have broad application prospects in the field of RF devices.

‌Fast Charger‌: Silicon carbide devices are considered an ideal choice for the new generation of power devices due to their excellent high temperature resistance, low loss and high efficiency. For example, Silicon carbide diodes such as Tyco Tianrun's G3S06505C and G5S6504Z are widely used in switching power supplies, PFC factor correction, motor drives, inverters and other scenarios.

‌Aerospace‌: Silicon carbide particle-reinforced aluminum-based composites have also achieved breakthrough applications in the aerospace field. For example, in the ventral fin of the F16 fighter and the new helicopter rotor system of Eurocopter, silicon carbide particle-reinforced aluminum-based composites significantly improve the stiffness and life of the components.

Market size and development trend of the silicon carbide industry

According to Yole's data, the global SiC power device market size will grow from US$1.09 billion in 2021 to US$6.297 billion in 2027, with an annual compound growth rate of 34%. At the same time, the market size of silicon carbide-based gallium nitride RF devices will continue to grow. In the Chinese market, the market size of silicon carbide and gallium nitride power electronic devices is expected to increase to nearly 30 billion yuan at a compound annual growth rate of 45%.

Challenges and opportunities in the silicon carbide industry

Although silicon carbide materials have many advantages, their preparation and application still face some challenges. For example, the preparation technology of silicon carbide substrates is difficult and the yield rate needs to be improved; the manufacturing cost of silicon carbide devices is high, and market promotion still needs efforts. However, with the continuous advancement of technology and the continuous expansion of the market, the silicon carbide industry will usher in more development opportunities. In the future, silicon carbide materials will be used in more fields, injecting new vitality into the development of the semiconductor industry.