1.Introduction to Silicon Carbide

Silicon Carbide, a synthetic compound of silicon and carbon, has emerged as a revolutionary material in advanced manufacturing. First synthesized in 1891 by Edward Acheson, silicon carbide combines exceptional thermal, electrical, and mechanical properties, making it indispensable in high-performance applications ranging from power electronics to aerospace.

2. Key Properties of Silicon Carbide

2.1 Structural and Physical Characteristics

‌Crystal Structure‌: Exists in over 250 polytypes (e.g., 3C-SiC, 4H-SiC, 6H-SiC), with 4H-SiC dominating semiconductor applications.

‌Hardness‌: Mohs scale rating of 9.5, second only to diamond.

‌Thermal Conductivity‌: 120-200 W/m·K, outperforming copper in heat dissipation.

‌Melting Point‌: ~2,700°C, suitable for extreme environments.

2.2 Electrical Properties

‌Wide Bandgap‌: 3.26 eV (4H-SiC) vs. 1.12 eV for silicon, enabling high-voltage and high-temperature operation.

‌Breakdown Field‌: 10x higher than silicon, reducing energy losses.

2.3 Chemical Stability

Resists oxidation, acids, and alkalis up to 1,600°C.

3. Applications of silicon carbide Across Industries

‌Industry‌‌ Use Cases‌‌：

Semiconductors‌ Power devices (MOSFETs, Schottky diodes), 5G/RF components 

‌Automotive‌ EV inverters:onboard chargers (e.g., Tesla Model 3 SiC traction inverter) 

‌Energy‌ Solar inverters:wind turbine converters, nuclear reactor sensors 

‌Aerospace‌ Satellite components:jet engine thermal coatings 

‌Industrial‌ Cutting tools:abrasives, refractory linings 

4.Processing Techniques and Challenges

4.1 Key Manufacturing Steps

‌Crystal Growth‌:Sublimation (PVT) for bulk crystals.

CVD for epitaxial layers.

‌Wafer Processing‌:Diamond wire slicing, chemo-mechanical polishing.

‌Device Fabrication‌:Ion implantation, dry etching.

4.2 Technical Barriers

‌Wafer Bow‌: <50 μm curvature required for 150mm wafers.

‌Yield Rates‌: ~60% for 200mm SiC epitaxial layers (Q1 2025 industry average).

5.Future Trends in SiC Technology (2025–2030 Outlook)

‌8-Inch Wafer Adoption‌: Projected to reduce device costs by 35% by 2028.

‌Quantum Applications‌: SiC vacancies for room-temperature quantum computing.

‌Global Capacity Expansion‌: China’s SiC production to reach 40% market share by 2027.

6. Conclusion

Silicon Carbide’s unique properties position it as a cornerstone material for sustainable technologies. Understanding the distinction between high-purity and conventional SiC—and their respective roles in power electronics versus industrial systems—is critical for optimizing design and manufacturing strategies. As the industry advances toward 8-inch wafers and novel applications, continuous learning and process innovation will remain essential.